Study on effect of complexing agents on Co oxidation/dissolution for chemical-mechanical polishing and cleaning process

被引：32
|
作者：
Kwon, Ohsung [1 ]
Bae, KiHo [2 ]
Byun, Jinuk [1 ]
Lim, Taeho [3 ]
Kim, Jae Jeong [1 ]
机构：
[1] Seoul Natl Univ, Sch Chem & Biol Engn, Inst Chem Proc, 1 Gwanak Ro, Seoul 08826, South Korea
[2] Samsung Elect Co Ltd, Semicond R&D Ctr, Hwaseong 18448, Gyeonggi, South Korea
[3] Soongsil Univ, Dept Chem Engn, 369 Sangdo Ro, Seoul 06978, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2020年 / 227卷
基金：
新加坡国家研究基金会;
关键词：
Cobalt; Dissolution; Surface oxide; Complexing agent; ELECTROCHEMICAL-BEHAVIOR; COBALT(II) COMPLEXES; ANODIC-DISSOLUTION; GALVANIC CORROSION; COPPER; ACID; CMP; OXIDATION; GLYCINE; TECHNOLOGY;
D O I：
10.1016/j.mee.2020.111308
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of complexing agents on Co oxidation/dissolution in alkaline solution was investigated for Co chemical-mechanical polishing (CMP) and post-CMP cleaning processes. The oxidation and dissolution properties of Co in a solution are greatly affected by complexing agents, which could influence the performance of Co CMP and post-CMP cleaning processes. Herein, three complexing agents, glycine, ethylenediaminetetraacetic acid (EDTA), and citric acid were studied. It was revealed that the complexing agents determined Co dissolution rate depending on the presence or absence of H2O2. Glycine showed a higher Co dissolution rate than EDTA and citric acid in the absence of H2O2, while EDTA showed the highest dissolution rate in the presence of H2O2. Negligible dissolution was observed with citric acid, regardless of the presence of H2O2. Electrochemical impedance and UV-Vis spectroscopies found that the difference in Co dissolution rates was related to Co oxidation rate and complexation capability of each complexing agent. Glycine showed a higher Co oxidation rate than EDTA, while EDTA had a much higher complexation capability than glycine. Citric acid exhibited the lowest Co oxidation rate and complexation capability, resulting in the slowest Co dissolution rate.
引用
收藏
页数：7
相关论文
共 50 条
  • [21] Characterization of scratches generated by a multiplaten copper chemical-mechanical polishing process
    Teo, TY
    Goh, WL
    Lim, VSK
    Leong, LS
    Tse, TY
    Chan, L
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 65 - 69
  • [22] ANALYSIS OF VELOCITY AS A CAUSE OF THICKNESS VARIATION IN A CHEMICAL-MECHANICAL POLISHING PROCESS
    COLACINO, JJ
    BARTUSH, TA
    SOLID STATE TECHNOLOGY, 1973, 16 (08) : 30 - 30
  • [23] Control methods for the chemical-mechanical polishing process in shallow trench isolation
    Wu, YT
    Gilhooly, J
    Philips, B
    ASMC 98 PROCEEDINGS - 1998 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP: THEME - SEMICONDUCTOR MANUFACTURING: MEETING THE CHALLENGES OF THE GLOBAL MARKETPLACE, 1998, : 66 - 70
  • [24] Control of microscratches in chemical-mechanical polishing process for shallow trench isolation
    Samsung Electronics Co, Ltd, Kyongki-do, Korea, Republic of
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 11 (5849-5853):
  • [25] Three-dimensional chemical-mechanical polishing process model by BEM
    Yoshida, T
    CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 593 - 604
  • [26] Control of microscratches in chemical-mechanical polishing process for shallow trench isolation
    Park, H
    Kim, KB
    Hong, CK
    Chung, UI
    Lee, MY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (11): : 5849 - 5853
  • [27] Effect of Complexing Agents on Surface Composition for Co Post-CMP Cleaning Process
    Byun, Jinuk
    Bae, KiHo
    Kwon, Ohsung
    Myong, Kyong Kyu
    Lim, Taeho
    Kim, Jae Jeong
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (02)
  • [28] Research on abrasives in the chemical-mechanical polishing process for silicon nitride balls
    Yuan, JL
    Lü, BH
    Lin, X
    Zhang, LB
    Ji, SM
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2002, 129 (1-3) : 171 - 175
  • [29] A nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation
    Lee, C
    Yang, EH
    Myung, NV
    George, T
    2003 THIRD IEEE CONFERENCE ON NANOTECHNOLOGY, VOLS ONE AND TWO, PROCEEDINGS, 2003, : 553 - 556
  • [30] The combinatorial effect of complexing agent and inhibitor on chemical-mechanical planarization of copper
    Du, TB
    Luo, Y
    Desai, V
    MICROELECTRONIC ENGINEERING, 2004, 71 (01) : 90 - 97
12345