Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide

A kind of wide spectrum Infrared detectors based on InAs/GaSb type-II superlattices (T2SLs) operating from 0.5 mu m to 5 mu m wavelength range is reported. The materials were grown by Molecular Beam Epitaxy (MBE) on GaSb substrates. Diverse types and sizes microstructure are fabricated on the surface of the detector to form the photon traps (PTs) array. PTs decrease the reflectivity and increase the light absorption of epitaxial material. Compared with the planar mesa detectors without antireflection (AR) film, detectors with PTs array exhibits a high responsivity of 0.86 A/W at 1160 nm and maximum D-star reaches to 10(9) cm Hz(1/2)/W in visible wavelength. Also, the PTs processed on detector augment spectral response and QE in infrared wavelength. The peak responsivity of the detector with PTs is to 1.35 A/W and QE can exceed to 0.76 in the infrared wavelength. The infrared detector with PTs is attractive for numerous applications.