Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction

被引：0

作者：

Vitusevich, SA ^{[1
]}

Danylyuk, SV ^{[1
]}

Klein, N ^{[1
]}

Petrychuk, MV ^{[1
]}

Belyaev, AE ^{[1
]}

Vertiatchikh, A ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Forschungszentrum Julich, Ctr Nanoelect Syst Informat Technol, Inst Schichten & Grenzflachen, D-52425 Julich, Germany

来源：

High Performance Devices, Proceedings | 2005年

关键词：

D O I：

10.1142/9789812702036_0023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transport and low frequency noise properties of undoped AlGaN/GaN high electron mobility transistor (HEMT) heterostructures with 33% and 75% Al mole fractions in the ohmic and non-linear regimes of applied voltages are studied. In contrast to the low Al mole fraction, the noise properties of 75 % content structures are not affected by passivation. At small voltages both kinds of structures demonstrate about the same level of 1/f excess noise. Deviations from conventional flicker noise were observed at high applied voltages. Additionally, differences in noise behaviour between the two structures were revealed. In the 75% content structures, a noise level suppression was registered in the non-linear regime, which is important for the development of low noise oscillator circuits.

引用

页码：138 / 144

页数：7

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