Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

被引：3

作者：

Kesaria, M. ^{[1
]}

de la Mare, M. ^{[1
]}

Krier, A. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2016年 / 49卷 / 43期

基金：

英国工程与自然科学研究理事会;

关键词：

dilute nitride; InAsSbN; MBE; photodiodes; HISTORY;

D O I：

10.1088/0022-3727/49/43/435107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron-heavy hole (e(1)-hh(1)) and electron-light hole (e(1)-lh(1)) transitions in the InAsSbN MQW, with a cut off wavelength similar to 4.20 mu m and peak detectivity D* = 1.25 x 10(9) cm Hz(1/2) W-1.

引用

页数：6

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