Angle-resolved light scattering from semiconductors

被引：0
|
作者：
Sterligov, VA [1 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev 28, Ukraine
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1998年 / 170卷 / 02期
关键词：
D O I：
10.1002/(SICI)1521-396X(199812)170:2<443::AID-PSSA443>3.0.CO;2-V
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The application of angle-resolved light scattering (ARS) to crystalline semiconductors is reviewed in this article. The possibility of both in situ and ex situ surface structure investigation using ARS is demonstrated. It is shown that the orientation anisotropy, spectral dependence of scattering properties and polarization behaviour may be used to distinguish between topographical and nontopographical scattering.
引用
收藏
页码：443 / 450
页数：8
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