Back bias impact on effective mobility of p-type nanowire SOI MOSFETs

被引：0

作者：

Paz, Bruna Cardoso ^{[1
]}

Casse, Mikael ^{[2
]}

Barraud, Sylvain ^{[2
]}

Reimbold, Gilles ^{[2
]}

Vinet, Maud ^{[2
]}

Faynot, Olivier ^{[2
]}

Pavanello, Marcelo Antonio ^{[1
]}

机构：

[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo, Brazil

[2] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

来源：

2018 33RD SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO) | 2018年

基金：

巴西圣保罗研究基金会;

关键词：

nanowire; SOI; back bias; mobility; tridimensional numerical simulations; TRI-GATE; EXTRACTION; PERFORMANCE; TRIGATE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we investigated the impact of back bias on the effective mobility of p-type Omega-gate nanowire SOI MOSFETs. Evaluation is performed through both measurements and 3D numerical simulations. Electrostatic potential, electric field and holes density are studied through simulations to explain transconductance degradation with back bias increase. Holes mobility linear dependence on back bias is found to be related to the inversion channel density and its position along the silicon thickness. Besides, this work also sheds light on the dependence of the drain current in vertically stacked NW with back bias, as its behavior is determined by the bottom Omega-gate level.

引用

页数：4

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