Textured Magnesium Titanate as Gate Oxide for GaN-Based Metal-Oxide-Semiconductor Capacitor

被引：16

作者：

Hsiao, Chu-Yun ^{[1
]}

Shih, Chuan-Feng ^{[1
,2
]}

Chien, Chih-Hua ^{[1
]}

Huang, Cheng-Liang ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2011年 / 94卷 / 04期

关键词：

THIN-FILMS; HETEROSTRUCTURE; INTERFACES; DEPOSITION; SILICON; GROWTH;

D O I：

10.1111/j.1551-2916.2011.04439.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate the first high-permittivity ceramic oxide for use as the gate oxide of the GaN-based metal-oxide-semiconductor (MOS) capacitor. An ilmenite magnesium titanate (MgTiO3) thin film prepared by sputtering was studied. When oxygen was introduced during sputtering, the preferred orientation changed from spinel Mg2TiO4 (111) to ilmenite MgTiO3 (003). The X-ray diffractometry theta-2 theta and -scans were performed to identify the preferred films. Possible epitaxial relationships at the Mg2TiO4 (111)/GaN (001) and MgTiO3 (003)/GaN (001) interfaces were proposed. Finally, the electrical properties of the Al/MgTiO3 (003)/GaN (001)/Al MOS capacitor were presented.

引用

页码：1005 / 1007

页数：3

共 50 条

[31] Investigations of GaN metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics
Shih, C. F.
Hung, K. T.
Hsiao, C. Y.
Shu, S. C.
Li, W. M.
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 480 (02) : 541 - 546
[32] Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor with High-κ/Metal Gate Using Oxygen Scavenging Process
Lee, Junil
Kim, Jang Hyun
Kwon, Dae Woong
Park, Euyhwan
Park, Taehyung
Kim, Hyun Woo
Park, Byung-Gook
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (05) : 4897 - 4900
[33] Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices
Roh, K
Youn, S
Yang, S
Roh, Y
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04): : 1562 - 1565
[34] Effects of Temperature on Dielectric Parameters of Metal-Oxide-Semiconductor Capacitor with Thermal Oxide Layer
Buyukbas, Aysel
Tataroglu, Adem
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2015, 10 (05) : 675 - 679
[35] Composition dependence of interface control and optimization on the performance of an HfTiON gate dielectric metal-oxide-semiconductor capacitor
He, G.
Sun, Z. Q.
Ma, Y. Q.
Wu, M. Z.
Liu, Y. M.
Shi, S. W.
Li, G.
Chen, X. S.
Zhang, L. D.
Fang, Z. B.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (10)
[36] Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor
He, G.
Sun, Z. Q.
Liu, M.
Zhang, L. D.
APPLIED PHYSICS LETTERS, 2010, 97 (19)
[37] NOVEL GATE VOLTAGE RAMPING TECHNIQUE FOR THE CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARGE TRAPPING PROPERTIES
TING, W
LO, GQ
KWONG, DL
ELECTRONICS LETTERS, 1990, 26 (16) : 1257 - 1259
[38] Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor
Liu, Li Ning
Choi, Hoi Wai
Xu, Jing Ping
Lai, Pui To
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2016, 10 (09): : 703 - 707
[39] Improved Performance of Multilayer TiON/TaON Structure as Gate Dielectric for InGaAs Metal-Oxide-Semiconductor Capacitor
Wang, Li-Sheng
Xu, Jing-Ping
Liu, Lu
Lu, Han-Han
PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON MATERIALS, ENVIRONMENTAL AND BIOLOGICAL ENGINEERING, 2015, 10 : 324 - 327
[40] Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Xu, J. P.
Ji, F.
Li, C. X.
Lai, P. T.
Guan, J. G.
Liu, Y. R.
APPLIED PHYSICS LETTERS, 2007, 91 (15)

← 1 2 3 4 5 →