Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots

被引：1

作者：

Beltran, Ana M. ^{[1
,2
]}

Ben, Teresa ^{[1
,2
]}

Sales, David L. ^{[1
,2
]}

Sanchez, Ana M. ^{[3
]}

Ripalda, Jose M. ^{[4
]}

Taboada, Alfonso G. ^{[4
]}

Varela, Maria ^{[5
]}

Pennycook, Stephen J. ^{[5
]}

Molina, Sergio I. ^{[1
,2
]}

机构：

[1] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat, Cadiz 11510, Spain

[2] Univ Cadiz, Fac Ciencias, IM & QI, Cadiz 11510, Spain

[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[4] CSIC, Inst Microelect Madrid, CNM, Madrid 28760, Spain

[5] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

来源：

ADVANCED SCIENCE LETTERS | 2011年 / 4卷 / 11-12期

关键词：

Quantum Dots; Antimony; InAs-GaAs; Transmission Electron Microscopy; High Angle Annular Dark Field;

D O I：

10.1166/asl.2011.1873

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report that Sb irradiation combined with the presence of a GaAs intermediate layer previous to the deposition of a GaSb layer over In As quantum dots grown by molecular beam epitaxy improves the crystalline quality of these nanostructures. Moreover, this approach to develop III-V-Sb nanostructures causes the formation of quantum dots buried by a confining GaSb layer and, in this way, achieving a type II band alignment. Both phenomena, studied by Conventional transmission electron microscopy (CTEM) and scanning-transmission electron microscope (STEM) techniques are keys to achieve the best room temperature photoluminescence results from InAs/GaAs (001) quantum dots. The Sb flux contributes to the preservation of the quantum dots size and at the same time reduces In diffusion from the wetting layer.

引用

页码：3776 / 3778

页数：3

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