High mobility Si/SiGe strained channel MOS transistors with HfO2/TiN gate stack

被引：0

作者：

Datta, S ^{[1
]}

Dewey, G ^{[1
]}

Doczy, M ^{[1
]}

Doyle, BS ^{[1
]}

Jin, B ^{[1
]}

Kavalieros, J ^{[1
]}

Kotlyar, R ^{[1
]}

Metz, M ^{[1
]}

Zelick, N ^{[1
]}

Chau, R ^{[1
]}

机构：

[1] Intel Corp, Components Res, Hillsboro, OR 97124 USA

来源：

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We integrate strained Si channel with HfO2 dielectric and TiN metal gate electrode to demonstrate NMOS transistors with electron mobility better than the universal mobility curve for SiO2, inversion equivalent oxide thickness of 1.4nm (EOT=1nm), and with three orders of magnitude reduction in gate leakage. To understand the physical mechanism that improves the inversion electron mobility at the HfO2/strained Si interface, we measure mobility at various temperatures and extract the various scattering components.

引用

页码：653 / 656

页数：4

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