Kinematical calculations of RHEED intensity oscillations during the growth of thin epitaxial films

被引：9
|
作者：
Daniluk, A [1 ]
机构：
[1] Marie Curie Sklodowska Univ, Inst Comp Sci, Dept Appl Comp Sci, PL-20031 Lublin, Poland
来源：
COMPUTER PHYSICS COMMUNICATIONS | 2005年 / 170卷 / 03期
关键词：
reflection high-energy electron diffraction (RHEED); Molecular Beam Epitaxy (MBE); computer simulations; non-linear differential equations; Unified Modeling Language (UML);
D O I：
10.1016/j.cpc.2005.04.005
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A practical computing algorithm working in real time has been developed for calculating the reflection high-energy electron diffraction (RHEED) from the molecular beam epitaxy (MBE) growing surface. The calculations are based on the use of kinematical diffraction theory. Simple mathematical models are used for the growth simulation in order to investigate the fundamental behaviors of reflectivity change during the growth of thin epitaxial films prepared using MBE.
引用
收藏
页码：265 / 286
页数：22
相关论文
共 50 条
  • [41] Real-time algorithm to determine the period and phase of Reflection High-Energy Electron Diffraction (RHEED) intensity oscillations during epitaxial growth
    Braun, Wolfgang
    JOURNAL OF CRYSTAL GROWTH, 2017, 477 : 50 - 53
  • [42] EPITAXIAL GROWTH OF THIN FILMS
    DIXIT, KR
    ACTA CRYSTALLOGRAPHICA, 1957, 10 (12): : 842 - 843
  • [43] Update 2.0 to rheed++: A complex computer model for dynamical one-beam calculations of RHEED intensity oscillations
    Daniluk, Andrzej
    SOFTWAREX, 2022, 18
  • [44] THE GROWTH OF SEMICONDUCTOR THIN-FILMS STUDIED BY RHEED
    PRICE, GL
    AUSTRALIAN JOURNAL OF PHYSICS, 1990, 43 (4-5): : 583 - 600
  • [45] ORIGIN OF AZIMUTHAL EFFECT OF RHEED INTENSITY OSCILLATIONS OBSERVED DURING MBE
    KAWAMURA, T
    SAKAMOTO, T
    OHTA, K
    SURFACE SCIENCE, 1986, 171 (01) : L409 - L414
  • [46] RHEED intensity oscillations observed during the growth of YSi2-x on Si(111) substrates
    Daniluk, A
    Mazurek, P
    Paprocki, K
    Mikolajczak, P
    SURFACE SCIENCE, 1997, 391 (1-3) : 226 - 236
  • [47] COMBINED STUDY OF RHEED SPOT PROFILES AND INTENSITY OSCILLATIONS DURING MBE GROWTH OF GE ON GE(111)
    DAWERITZ, L
    PCHELYAKOV, OP
    MASHANOV, VI
    SOKOLOV, LV
    STENIN, SI
    BERGER, H
    SURFACE SCIENCE, 1990, 230 (1-3) : L162 - L168
  • [48] RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering
    Ojima, T.
    Tainosho, T.
    Sharmin, S.
    Yanagihara, H.
    AIP ADVANCES, 2018, 8 (04):
  • [49] X-RAY-INTENSITY OSCILLATIONS OCCURRING DURING GROWTH OF GE ON GE(111) - A COMPARISON WITH RHEED
    VANSILFHOUT, RG
    FRENKEN, JWM
    VANDERVEEN, JF
    FERRER, S
    JOHNSON, A
    DERBYSHIRE, H
    NORRIS, C
    MACDONALD, JE
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 : SB213 - SB214
  • [50] Interdiffusion of components during epitaxial growth of multicomponent thin films
    Klets'ky, SV
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2005, 27 (06): : 743 - 751
12345