High breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction

We have reported a lateral GaN SBDs on AlGaN/GaN hetero-junction employing floating metal rings (FMRs) which exhibit a very high breakdown voltage, a low leakage current and a low on-state voltage. We have obtained a very high breakdown voltage of 930V without any additional process step. We have also optimized design parameters of FMR, such as the space between main junction and FMR and the number of rings. Our experimental results show that FMR which is rather simple may be suitable for lateral GaN SBD.