High breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN/GaN hetero-junction

被引：0

作者：

Lee, SC ^{[1
]}

Ha, MW ^{[1
]}

Her, JC ^{[1
]}

Kim, SS ^{[1
]}

Lim, JY ^{[1
]}

Seo, KS ^{[1
]}

Han, MK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2005年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have reported a lateral GaN SBDs on AlGaN/GaN hetero-junction employing floating metal rings (FMRs) which exhibit a very high breakdown voltage, a low leakage current and a low on-state voltage. We have obtained a very high breakdown voltage of 930V without any additional process step. We have also optimized design parameters of FMR, such as the space between main junction and FMR and the number of rings. Our experimental results show that FMR which is rather simple may be suitable for lateral GaN SBD.

引用

页码：247 / 250

页数：4

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