COMPARISON OF MEMRISTOR MODELS FOR MICROWAVE CIRCUIT SIMULATIONS IN TIME AND FREQUENCY DOMAIN

被引：1

作者：

Markovic, Ivo ^{[1
]}

Potrebic, Milka ^{[1
]}

Tosic, Dejan ^{[1
]}

Cvetkovic, Zlata ^{[2
]}

机构：

[1] Univ Belgrade, Sch Elect Engn, Bulevar Kralja Aleksandra 73, Belgrade, Serbia

[2] Univ Nis, Fac Elect Engn, Nish, Serbia

来源：

FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS | 2019年 / 32卷 / 01期

关键词：

Memristor models; microwave circuit; transition process; DYNAMICS;

D O I：

10.2298/FUEE1901065M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As reported in the open literature, there are many memristor models for the circuit-level simulations. Some of them are not particularly suitable for microwave circuit simulations. At RF/microwave frequencies, the memristor dynamics become an important issue for the transition process. In this paper we present a number of different SPICE memristor model groups. Each group is explained using representative models, which are analysed and compared from the microwave circuit analysis viewpoint. We consider the model behaviour at RF/microwave frequencies and the memristance setting issues. Results are compared and the best models are recommended.

引用

页码：65 / 74

页数：10

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