Shot noise in x-ray measurements with p-i-n diodes -: art. no. 076101

被引：6
|
作者：
Spear, JD [1 ]
机构：
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Sci Div, Berkeley, CA 94720 USA
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2005年 / 76卷 / 07期
关键词：
D O I：
10.1063/1.1947776
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The importance of shot noise is considered for situations in which p-i-n diodes monitor x-ray radiation. An expression for shot noise is derived in terms of the photon energy, the pair creation energy of the diode material, and the photocurrent. Statistical analysis shows that the Fano factor can be neglected for noise calculations. A lock-in amplifier measured the low frequency photocurrent noise from an unbiased silicon p-i-n photodiode that monitored radiation in the range of 6-16 keV at a synchrotron beamline. With ordinary electronic amplification and shielding, shot noise dominated other noise sources for photocurrents exceeding about 5 pA. (c) 2005 American Institute of Physics.
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页数：3
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