Characterization of 2 inch SiC wafers made by the sublimation method

被引：1
|
作者：
Sasaki, M [1 ]
Shiomi, H [1 ]
Nishino, S [1 ]
机构：
[1] Kyoto Inst Technol, Fac Engn & Design, Sakyo Ku, Kyoto 6068585, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷
关键词：
cross polarizer; sub-grain boundary; sublimation; X-ray diffraction (XRD);
D O I：
10.4028/www.scientific.net/MSF.353-356.267
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two inch 6H-SiC wafers have been studied. Examination of these wafers by cross polarizer showed black and white stripes which corresponded to sub-grain boundaries. The creation of these stripes was influenced by thermal expansion, the shape of bulk surface etc. This phenomena was confirmed by XRD. Two areas were identified by XRD analysis where sub-grain boundaries were easily created or not.
引用
收藏
页码：267 / 270
页数：4
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