On the sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a magnetic field

被引：0
|
作者：
Grado-Caffaro, M. A.
Grado-Caffaro, M.
机构：
[1] 28029 Madrid, C/Julio Palacios 11
来源：
OPTIK | 2011年 / 122卷 / 07期
关键词：
Strained quantum-well laser; Sensitivity; Temperature; Magnetic field;
D O I：
10.1016/j.ijleo.2010.03.022
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The sensitivity to temperature of the threshold current in a strained quantum-well semiconductor laser under a perpendicular magnetic field is determined quantitatively by means of a suitable merit parameter. The values taken on by this parameter are discussed in terms of changes in the temperature and in the magnetic-field strength. (C) 2010 Elsevier GmbH. All rights reserved.
引用
收藏
页码：561 / 562
页数：2
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