IMPROVED PARAMETER EXTRACTION TECHNIQUE FOR GAN HEMT's SMALL SIGNAL MODEL

被引：0
|
作者：
Goyal, Umakant [1 ]
Mishra, Meena [1 ]
机构：
[1] Solid State Phys Lab, Delhi, India
来源：
2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年
关键词：
GAN HEMT; small signal model; parameter extraction; reverse transfer conductance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the influence of the reverse transfer conductance R-gd to extract the small signal parameters of GaN high electron mobility transistors (HEMTs) at microwave frequencies. In this paper a simplified method for extracting the small-signal equivalent circuit elements of HEMTs by means of measurements of scattering parameters only is presented. We have calculated the improvement in terms of first and second order error by means of inclusion of a gate drain resistance R-gd into the model. The validity of this method was verified on a set of HEMTs having different gate widths tested on wafer at several biases.
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页数：3
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