The influence of radiation on the electrical characteristics of MOSFET and its revival by different annealing techniques

被引：1

作者：

Pushpa, N. ^{[1
]}

Prakash, A. P. Gnana ^{[2
]}

机构：

[1] Univ Mysore, JSS Coll Arts, PG Dept Phys Commerce & Sci, Mysuru, India

[2] Univ Mysore, Dept Studies Phys, Mysuru, India

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2022年 / 177卷 / 3-4期

关键词：

MOSFET; radiation impact; threshold voltage; mobility;

D O I：

10.1080/10420150.2022.2039930

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Defects originate in N-channel MOSFETs by exposing them to high-energy ions and Co-60 gamma radiation separately to different radiation doses. The electrical variations in MOSFETs are characterized systematically before and after the influence of radiation on MOSFETs. The impact of Co-60 gamma radiation on threshold voltage (V-TH) and mobility (mu) characteristics of MOSFETs is more than the impact of high energy ions on MOSFETs. The annealing of electrical characteristics in the irradiated MOSFETs is studied systematically by isothermal and isochronal annealing techniques. The isochronal annealing technique is more preferable due to its high recovery rate than the isothermal annealing technique.

引用

页码：392 / 400

页数：9

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