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Spin Hall effect by surface roughness
被引:39
|作者:
Zhou, Lingjun
[1
,2
]
Grigoryan, Vahram L.
[1
,2
]
Maekawa, Sadamichi
[3
,4
]
Wang, Xuhui
[5
]
Xiao, Jiang
[1
,2
,6
]
机构:
[1] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[3] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
[4] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan
[5] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
[6] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源:
基金:
中国国家自然科学基金;
关键词:
ROOM-TEMPERATURE;
SEMICONDUCTORS;
TRANSPORT;
D O I:
10.1103/PhysRevB.91.045407
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.
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页数:6
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