1kV 4H-SiC JBS rectifiers fabricated using an AlN capped anneal

被引：0

作者：

Zhu, L ^{[1
]}

Shanbhag, M

Chow, TP

Jones, KA

Ervin, MH

Shah, PB

Derenge, MA

Vispute, RD

Venkatesan, T

Agarwal, A

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[2] SEDD, Army Res Lab, Adelphi, MD 20783 USA

[3] Univ Maryland, Dept Phys, College Pk, MD 20783 USA

[4] Cree Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

4H-SiC; AlN; anneal; Junction Barrier Schottky; Schottky rectifier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1 kV 4H-SiC JBS rectifiers were fabricated using AlN capped anneal and compared with those annealed conventionally in a furnace. The surface damage during the high temperature activation anneal is significantly reduced using AlN capped anneal. The forward drop of the JBS rectifiers is <2.5 V while the leakage current is about 2 orders of magnitude lower than that of the Schottky rectifier. The blocking voltage >1 kV was achieved.

引用

页码：843 / 846

页数：4

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