Processing and characterization of ferroelectric thin films by multi-ion-beam sputtering

被引：5
|
作者：
Kanno, I
Hayashi, S
Takayama, R
Sakakima, H
Hirao, T
机构：
[1] Central Research Laboratories, Matsushita Elec. Indust. Co., Ltd., Seikacho
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 112卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(95)01003-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Ferroelectric thin films of PbTiO3, (Pb,La)TiO3 (PLT) and Pb(Zr,Ti)O-3 (PZT) were successfully fabricated using a multi-ion-beam sputtering technique. X-ray diffraction (XRD) measurements demonstrated that the films with perovskite structure were grown on (100)Pt/MgO and (111)Pt/Ti/SiO2/Si substrates at a low substrate temperature of 415 degrees C. The PZT films about 630 Angstrom in thickness exhibited a high dielectric constant of 675 and an excellent ferroelectric P-E hysteresis loop. In order to promote the surface reactions, the substrates were irradiated with XeCl excimer laser beam during the deposition at a room temperature, The results of XRD revealed the formation of perovskite PZT thin films.
引用
收藏
页码：125 / 128
页数：4
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