Characterization of Pb(Zr, Ti)O3 thin films prepared by multi-ion-beam sputtering

被引：0
|
作者：
Kanno, Isaku [1 ]
Hayashi, Shigenori [1 ]
Kamada, Takeshi [1 ]
Kitagawa, Masatoshi [1 ]
Hirao, Takashi [1 ]
机构：
[1] Matsushita Electric Industrial Co, Ltd, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 1 B期
关键词：
Crystal lattices - Dielectric properties - Diffusion in solids - Epitaxial growth - Film preparation - Ion beams - Lead compounds - Sputter deposition - Substrates - Thin films - Titanium oxides - Transmission electron microscopy;
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摘要：
Lead-zirconate-titanate (PZT) thin films with lead-lanthanum-titanate (PLT) buffer layer prepared by multi-ion-beam sputtering were characterized from the structural and electrical viewpoints. Cross-sectional transmission electron microscopy (TEM) observation demonstrated the epitaxial growth of the films without intermixing layers or misfit dislocations. Nominal interdiffusion of PZT/PLT/substrates was found in the depth profiles obtained from secondary ion mass spectroscopy (SIMS). The PZT films over the entire compositional range of Zr/Ti ratio exhibited relative dielectric constant which was consistent with the dependence of bulk PZT; however, obvious changes of lattice spacings at phase boundaries were not found from X-ray diffraction (XRD) measurement.
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页码：574 / 577
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