Growth of large grain-size Cu2ZnSn(SxSe1-x)4 thin films by annealing precursors sputtered from a single quaternary target for solar cells application

被引:14
|
作者
Yang, Gang [1 ,2 ]
Li, Yong-Feng [1 ,2 ,3 ]
Yao, Bin [1 ,2 ,3 ]
Ding, Zhan-Hui [3 ]
Deng, Rui [4 ]
Zhao, Hai-Feng [5 ]
Zhang, Li-Gong [5 ]
Zhang, Zhen-Zhong [5 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130023, Peoples R China
[2] Jilin Univ, Coll Phys, Changchun 130023, Peoples R China
[3] Jilin Univ, Coll Phys, Minist Educ, Key Lab Phys & Technol Adv Batteries, Changchun 130012, Jilin, Peoples R China
[4] Changchun Univ Sci & Technol, Sch Mat Sci & Engn, Changchun 130022, Peoples R China
[5] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dongnanhu Rd, Changchun 130033, Jilin, Peoples R China
基金
中国国家自然科学基金;
关键词
CZTSSe; Sputtering; Quaternary target; Se supply; Solar cell; CONVERSION EFFICIENCY; RAMAN-SCATTERING; SELENIZATION; SE; HETEROJUNCTION; TEMPERATURE; FABRICATION; SULFUR;
D O I
10.1016/j.spmi.2017.05.036
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A simple and cost effective method of sputtering a single quaternary target following a rapid thermal process (RTP) was applied to prepare Cu2ZnSn(SxSe1-x)(4) (CZTSSe) thin films. The different Se supply during thermal annealing was used to adjust the Se contents in films. The structure, morphology, optical and electrical properties of the CZTSSe films were analyzed comprehensively. Polycrystalline kesterite CZTSSe absorbers with large columnar grains were obtained. The grains are densely packed and surfaces are smooth. The evolution of the optical and electrical properties with different Se contents in the CZTSSe films was studied in details. The conversion efficiency of the Se-rich CZTSSe thin film solar cell was determined to be 3.38%, and the corresponding J-V characteristic was analyzed carefully. The severe interface recombination is the key factor for the large ideality factor and reverse saturation current. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:480 / 489
页数:10
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