Chemical-Mechanical Polishing of NiP Alloy for Hard Disk Drive Substrates

被引：0

作者：

Lee, Weiming ^{[1
]}

Qi, Zuqiang ^{[1
]}

Lu, Wanjia ^{[1
]}

Luo, Jianbin

机构：

[1] Shenzhen Kaifa Magnet Recording Co Ltd, Shenzhen 518035, Peoples R China

来源：

ADVANCED TRIBOLOGY | 2009年

关键词：

Chemical-mechanical polishing; Hard disk drive substrate; Velocity field; Material remove rate; Roughness; WEAR;

D O I：

10.1007/978-3-642-03653-8_338

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

In this study, the velocity field and the polishing track on the disks for the chemical-mechanical polishing (CMP) process have been simulated, and their effects on material remove rate (MRR) and surface parameters of a polished disk are discussed. The mechanical effects of two slurries (Slurry A and Slurry B) with different abrasive size distribution on the polishing properties and the surface parameters as well as the mechanisms are also studied. An ultra-smooth surface has been achieved with both Slurry A and Slurry B. Average roughness (Ra) by AFM is about 0.11 nm for Slurry A with broad abrasive size distribution, and about 0.09 nm for Slurry B with narrow abrasive size distribution.

引用

页码：1011 / +

页数：2

共 50 条

[41] Lubricating behavior in chemical-mechanical polishing of copper
Liang, H
Xu, GH
SCRIPTA MATERIALIA, 2002, 46 (05) : 343 - 347
[42] Chemical-mechanical polishing of PECVD silicon nitride
Hu, YZ
Yang, GR
Chow, TP
Gutmann, RJ
THIN SOLID FILMS, 1996, 290 : 453 - 457
[43] Surface removal rate in chemical-mechanical polishing
Xia, X
Ahmadi, G
PARTICULATE SCIENCE AND TECHNOLOGY, 2002, 20 (03) : 187 - 196
[44] CHEMICAL-MECHANICAL POLISHING OF INTERLAYER DIELECTRIC - A REVIEW
ALI, I
ROY, SR
SHINN, G
SOLID STATE TECHNOLOGY, 1994, 37 (10) : 63 - &
[45] The Role of Pad Topography in Chemical-Mechanical Polishing
Kim, Sanha
Saka, Nannaji
Chun, Jung-Hoon
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2014, 27 (03) : 431 - 442
[46] CHEMICAL-MECHANICAL POLISHING OF COPPER FOR MULTILEVEL METALLIZATION
STAVREVA, Z
ZEIDLER, D
PLOTNER, M
DRESCHER, K
APPLIED SURFACE SCIENCE, 1995, 91 (1-4) : 192 - 196
[47] Chemical-mechanical polishing of copper in alkaline media
Luo, Q
Campbell, DR
Babu, SV
THIN SOLID FILMS, 1997, 311 (1-2) : 177 - 182
[48] Chemical-Mechanical Polishing YAG for Wafer Bonding
Mc Kay, J.
Ventosa, C.
Goorsky, M. S.
SEMICONDUCTOR WAFER BONDING 12: SCIENCE, TECHNOLOGY, AND APPLICATIONS, 2012, 50 (07): : 387 - 391
[49] Chemical-mechanical polishing of phosphate laser glass
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
Zhongguo Jiguang, 2007, 8 (1151-1154):
[50] A mathematical model for material removal and chemical-mechanical synergy in chemical-mechanical polishing at molecular scale
Bai, J.
Zhao, Y. W.
Wang, Y. G.
APPLIED SURFACE SCIENCE, 2007, 253 (20) : 8489 - 8494

← 1 2 3 4 5 →