Plasma treatment of HfO2-based metal-insulator-metal resistive memories

被引：10

作者：

Vallee, C. ^{[1
]}

Gonon, P. ^{[1
]}

Mannequin, C. ^{[1
]}

Chevolleau, T. ^{[1
]}

Bonvalot, M. ^{[1
]}

Grampeix, H. ^{[2
]}

Licitra, C. ^{[2
]}

Rochat, N. ^{[2
]}

Jousseaume, V. ^{[2
]}

机构：

[1] UJF, CNRS, UMR 5129, LTM, F-38054 Grenoble 9, France

[2] CEA LETI Minatec, F-38054 Grenoble, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2011年 / 29卷 / 04期

关键词：

LAYER; MECHANISMS; DIFFUSION; HFO2;

D O I：

10.1116/1.3599825

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work focuses on Au/HfO2/TiN nonvolatile resistive memory [ resistive random access memories (RRAMs)] stacks, where HfO2 is deposited by the atomic layer deposition technique on TiN electrodes. For as-grown RRAMs, no Reset is observed (the structure remains locked in a low resistive state). It is observed that an NH3 plasma treatment of the HfO2/TiN bilayer can restore a Reset stage. X-ray photoelectron spectroscopy analyses showed that the Reset recovery is related to a modification of the HfO2/TiN interface via transformation of the TiON interfacial layer. Thus, postdeposition plasma treatments of the oxide/ electrode interface are identified as a valuable tool to improve the switching properties of oxide-based RRAMs. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3599825]

引用

页数：6

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