Plasma treatment of HfO2-based metal-insulator-metal resistive memories

被引：10

作者：

Vallee, C. ^{[1
]}

Gonon, P. ^{[1
]}

Mannequin, C. ^{[1
]}

Chevolleau, T. ^{[1
]}

Bonvalot, M. ^{[1
]}

Grampeix, H. ^{[2
]}

Licitra, C. ^{[2
]}

Rochat, N. ^{[2
]}

Jousseaume, V. ^{[2
]}

机构：

[1] UJF, CNRS, UMR 5129, LTM, F-38054 Grenoble 9, France

[2] CEA LETI Minatec, F-38054 Grenoble, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2011年 / 29卷 / 04期

关键词：

LAYER; MECHANISMS; DIFFUSION; HFO2;

D O I：

10.1116/1.3599825

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work focuses on Au/HfO2/TiN nonvolatile resistive memory [ resistive random access memories (RRAMs)] stacks, where HfO2 is deposited by the atomic layer deposition technique on TiN electrodes. For as-grown RRAMs, no Reset is observed (the structure remains locked in a low resistive state). It is observed that an NH3 plasma treatment of the HfO2/TiN bilayer can restore a Reset stage. X-ray photoelectron spectroscopy analyses showed that the Reset recovery is related to a modification of the HfO2/TiN interface via transformation of the TiON interfacial layer. Thus, postdeposition plasma treatments of the oxide/ electrode interface are identified as a valuable tool to improve the switching properties of oxide-based RRAMs. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3599825]

引用

页数：6

共 50 条

[1] Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material
Bertaud, T.
Walczyk, D.
Walczyk, Ch.
Kubotsch, S.
Sowinska, M.
Schroeder, T.
Wenger, Ch.
Vallee, C.
Gonon, P.
Mannequin, C.
Jousseaume, V.
Grampeix, H.
THIN SOLID FILMS, 2012, 520 (14) : 4551 - 4555
[2] Electrode effects on the conduction mechanisms in HfO2-based metal-insulator-metal capacitors
El Kamel, F.
Gonon, P.
Vallee, C.
Jorel, C.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)
[3] On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration
Walczyk, Ch
Wenger, Ch
Walczyk, D.
Lukosius, M.
Costina, I.
Fraschke, M.
Dabrowski, J.
Fox, A.
Wolansky, D.
Thiess, S.
Miranda, E.
Tillack, B.
Schroeder, T.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
[4] Voltage Linearity Improvement of HfO2-Based Metal-Insulator-Metal Capacitors with H2O Prepulse Treatment
Lin, Cheng-Ming
Chen, Yen-Ting
Lee, Cheng-Hang
Chang, Hung-Chih
Chang, Wei-Chiang
Chang, Huan-Lin
Liu, C. W.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (02) : H128 - H131
[5] Resistive switching in HfO2-based atomic layer deposition grown metal insulator metal structures
Jancovic, Peter
Hudec, Boris
Dobrocka, Edmund
Derer, Jan
Fedor, Jan
Froehlich, Karol
APPLIED SURFACE SCIENCE, 2014, 312 : 112 - 116
[6] Basic investigation of HfO2 based metal-insulator-metal diodes
Dudek, P.
Schmidt, R.
Lukosius, M.
Lupina, G.
Wenger, Ch.
Abrutis, A.
Albert, M.
Xu, K.
Devi, A.
THIN SOLID FILMS, 2011, 519 (17) : 5796 - 5799
[7] Resistance switching in HfO2 metal-insulator-metal devices
Gonon, P.
Mougenot, M.
Vallee, C.
Jorel, C.
Jousseaume, V.
Grampeix, H.
El Kamel, F.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
[8] Resistive switching in a metal-insulator-metal device with γ-APTES as the insulator layer
Lin, Jing-Jenn
Lin, Shih-Hung
Wu, You-Lin
SOLID-STATE ELECTRONICS, 2017, 136 : 86 - 91
[9] Influence of the electrode material on HfO2 metal-insulator-metal capacitors
Wenger, Ch.
Lukosius, M.
Muessig, H. -J.
Ruhl, G.
Pasko, S.
Lohe, Ch.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01): : 286 - 289
[10] Investigation of electrical properties of HfO2 metal-insulator-metal (MIM) devices
Khaldi, O.
Jomni, F.
Gonon, P.
Mannequin, C.
Yangui, B.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 116 (04): : 1647 - 1653

← 1 2 3 4 5 →