Observation of ultrasonic Al-Si wire wedge bond interface using high resolution transmission electron microscope

被引：0
|
作者：
Ji, Hongjun [1 ]
Li, Mingyu [1 ]
Kweon, Younggak [2 ]
Chang, Woongseong [2 ]
机构：
[1] Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[2] Res Inst Ind Sci & Technol, Welding Res Ctr, Pohang 790600, South Korea
来源：
ICEPT: 2007 8TH INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING TECHNOLOGY, PROCEEDINGS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Due to small bond size, short bonding time, especially slight interface reaction, bonding details can not be recognized using scanning electron microscope and energy density x-ray spectrum. In order to understand the physical mechanism of ultrasonic wedge bonding, in this paper, bond interface of ultrasonic AlSi1 wire wedge bonding on Au/Ni/Cu pad was investigated under high resolution transmission electron microscope. Au8Al3 intermetallic compounds were identified by convergent beam electron diffraction, thickness of which was about 200nm and its lattice images were captured. Solid-state diffusion theory can not be used to explain why such thick compound formed within milliseconds at room temperature. Ultrasonic effects attributed to formation of the metallurgical bonds.
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页码：291 / +
页数：2
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