Synthesis of simple, low cost and benign sol-gel Cu2ZnSnS4 thin films: influence of different annealing atmospheres

被引:43
|
作者
Agawane, G. L. [1 ]
Shin, S. W. [2 ]
Vanalakar, S. A. [1 ]
Suryawanshi, M. P. [1 ,3 ]
Moholkar, A. V. [3 ]
Yun, Jae Ho [4 ]
Gwak, Jihye [4 ]
Kim, Jin Hyeok [1 ]
机构
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Optoelect Convergence Res Ctr, Kwangju 500757, South Korea
[2] Univ Minnesota, Dept Chem Engn & Mat Sci CEMS, Minneapolis, MN 55455 USA
[3] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India
[4] Korea Inst Energy Res, Photovolta Lab, Taejon 305343, South Korea
关键词
METALLIC PRECURSORS; EFFICIENCY; CELLS; SULFURIZATION; DEPOSITION; FABRICATION;
D O I
10.1007/s10854-014-2627-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study reports the preparation and characterization of CuZnSnS4 (CZTS) thin films by a non-toxic sol-gel technique. The CZTS thin films were prepared on Molybdenum substrates and annealed in various atmospheres viz. N-2 gas, Sulphur (S) powder and H2S gas. The effects of various annealing atmospheres on the morphological, structural, compositional and optical properties of the CZTS thin films were investigated. The field emission scanning electron microscopy studies on the as-deposited CZTS thin film showed that the film consisted nanocrystalline CZTS grains while all the annealed films were highly compact, uniform, and that the thickness varied from 1,884 to 832 nm. The X-ray diffraction and Raman studies on the CZTS thin films showed formation of the kesterite structure without any secondary phases. All the CZTS thin films were nearly stoichiometric with slightly Zn rich composition which is favorable for a high photovoltaic performance of solar cells. Photoluminescence (PL) spectroscopy study on all the CZTS thin films showed an asymmetric broad band emission. The direct band gap energy of the CZTS thin films was found to be between 1.3 and 1.6 eV, as confirmed by PL study. The S powder-annealed CZTS thin film was further used for the fabrication of a solar cell of structure SLG/Mo/CZTS/CdS/i-ZnO/AZO/Al grid. The best solar cell showed a short-circuit current density of 7.19 mA/cm(2), open-circuit voltage of 270 mV, fill factor of 39 % and power conversion efficiency of 0.77 % under air mass 1.5 (100 mW/cm(2)) illumination.
引用
收藏
页码:1900 / 1907
页数:8
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