P-induced nanocrystallite dispersion in amorphous-nanocrystalline mixed-phase Si:H thin films

The effects of P doping on the nanocrystalline formation in mixed-phase Si: H thin films were investigated using secondary-ion mass spectrometry, Raman spectroscopy, atomic force microscopy, cross-sectional transmission electron microscopy, and scanning Kelvin probe microscopy. We found that Si nanocrystallites in the intrinsic and weakly P-doped materials aggregate to form cone-shaped structures. The local workfunction of the nanocrystalline aggregation areas is larger than the surrounding amorphous areas. Increasing the P-doping level requires an increased hydrogen dilution to reach the similar Raman crystallinity. The nanocrystalline aggregation disappears in the heavily P-doped materials, but isolated nancrystallites appear. The effect of P-doping on the nanostructure is explained with the coverage of P-related radicals on the existing nanocrystalline surface during the deposition and the P segregation in grain boundaries, which prevent new nucleation on the surface of existing nanocrystallites. (c) 2008 American Institute of Physics.