Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers

被引：2

作者：

Drozdov, Yu. N. ^{[1
]}

Drozdov, M. N. ^{[1
]}

Khrykin, O. I. ^{[1
]}

Shashkin, V. I. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2010年 / 4卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

LAYERS;

D O I：

10.1134/S1027451010060200

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The features and results of X-ray diffraction analysis of GaN films are presented. The films are grown by metalorganic vapor-phase epitaxy on c-plane sapphire substrates using GaN or AlN nucleation layers deposited at a low temperature. Measurements of the twist angle and concentrations of Al (x) Ga(1-x) N solid solutions are discussed in detail.

引用

页码：998 / 1001

页数：4

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