Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers

被引：2
|
作者：
Drozdov, Yu. N. [1 ]
Drozdov, M. N. [1 ]
Khrykin, O. I. [1 ]
Shashkin, V. I. [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2010年 / 4卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
LAYERS;
D O I：
10.1134/S1027451010060200
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The features and results of X-ray diffraction analysis of GaN films are presented. The films are grown by metalorganic vapor-phase epitaxy on c-plane sapphire substrates using GaN or AlN nucleation layers deposited at a low temperature. Measurements of the twist angle and concentrations of Al (x) Ga(1-x) N solid solutions are discussed in detail.
引用
收藏
页码：998 / 1001
页数：4
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