Dark count probability and quantum efficiency of avalanche photodiodes for single-photon detection

被引:122
|
作者
Kang, Y [1 ]
Lu, HX
Lo, YH
Bethune, DS
Risk, WP
机构
[1] Univ Calif San Diego, Jacobs Sch Engn, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
关键词
D O I
10.1063/1.1616666
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a physical model that quantitatively describes the behavior of the dark count probability and single-photon quantum efficiency of avalanche diodes under conditions that allow these devices to be used for single-photon detection. The model shows analytically how various physical parameters such as dark current, dc gain, Geiger mode gain, carrier detrap time, pulse repetition rate, etc., can affect the dark count probability and single-photon quantum efficiency of a Geiger mode avalanche photodiode. The theory agrees well with the experimental results. (C) 2003 American Institute of Physics.
引用
收藏
页码:2955 / 2957
页数:3
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