Atomic diffusion of boron and other constituents in amorphous Si-B-C-N

被引：19

作者：

Schmidt, H. ^{[1
]}

Borchardt, G. ^{[1
]}

Kaitasov, O. ^{[2
]}

Lesage, B. ^{[3
]}

机构：

[1] Tech Univ Clausthal, AG Thermochem & Mikrokinet, Fak Nat & Mat Wissensch, D-38678 Clausthal Zellerfeld, Germany

[2] Univ Paris 11, Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France

[3] Univ Paris 11, Lab Etud Mat Hors Equilibre, F-91405 Orsay, France

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2007年 / 353卷 / 52-54期

关键词：

amorphous semiconductors; diffusion and transport; glasses; secondary ion mass spectroscopy;

D O I：

10.1016/j.jnoncrysol.2007.06.050

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The self-diffusion of boron is studied between 1550 and 1700 degrees C in polymer-derived amorphous solids of composition Si3BC4.3N2. Ion implanted stable B-10 isotopes are used as tracers and secondary ion mass spectrometry for depth profiling. The experimentally determined diffusivities obey an Arrhenius behavior with a high activation enthalpy of Delta H = (7.3 +/- 1.3) eV and a high pre-exponential factor of D-0 = 1.6 m(2)/s. The results are discussed in relation to the diffusivities of the other constituents (Si, C, N) and possible diffusion mechanism are suggested. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：4801 / 4805

页数：5

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