A 3.3V transconductor in 0.35μm CMOS with 80dB SFDR up to 10MHz

被引：2

作者：

Chilakapati, U ^{[1
]}

Fiez, T ^{[1
]}

Eshraghi, A ^{[1
]}

机构：

[1] Innocomm Wireless, San Diego, CA USA

来源：

PROCEEDINGS OF THE IEEE 2001 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2001年

关键词：

D O I：

10.1109/CICC.2001.929822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS transconductor uses resistors at the input and an OTA in unity-gain feedback to achieve 80dB SFDR for 3.6V(pp) differential inputs up to 10MHz. The transconductance core dissipates 10.56mW from a 3.3V supply and occupies 0.4mm(2) in a 0.35 mum CMOS process.

引用

页码：459 / 462

页数：4

共 23 条

[21] An analog front-end for remote sensor applications with high input common-mode rejection including a 16bit ΣΔ ADC in 0.35μm 3.3V CMOS process
Compagne, E
Maulet, S
Genevey, S
ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2004, : 459 - 462
[22] A 1-V transient-free and DC-offset-canceled PGA with a 17.1-MHz constant bandwidth over 52-dB control range in 0.35-μm CMOS
Mak, PI
Seng-Pan, U
Martins, RP
CICC: PROCEEDINGS OF THE IEEE 2005 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2005, : 649 - 652
[23] A 1.2V, 10MHz, low-pass Gm-C filter with Gm-cells based on triode-biased MOS and passive resistor in 0.13μm CMOS technology
Jo, JG
Yoo, C
Jeong, C
Jeong, CY
Lee, MY
Kwon, JK
CICC: PROCEEDINGS OF THE IEEE 2005 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2005, : 195 - 198

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