Effect of combined plastic deformation on microhardness of single-crystalline p-type germanium and silicon

被引：1
|
作者：
Velikhanov, A. R. [1 ]
机构：
[1] Russian Acad Sci, Daghestan Fed Res Ctr, H Amirkhanov Inst Phys, M Yaragsky St 94, Makhachkala 367015, Russia
来源：
PHYSICA B-CONDENSED MATTER | 2021年 / 621卷
关键词：
Plastic deformation; Germanium; Silicon; Temperature; Electric current; Microhardness; COMPRESSION CURVES; ELECTRIC-CURRENT; PARAMETERS;
D O I：
10.1016/j.physb.2021.413205
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study of conductivity and microhardness was performed on plastically deformed samples of germanium and silicon. The dependences of the microhardness on the degree of plastic deformation of germanium and silicon have noticeable differences. The microhardness of germanium and silicon varies significantly with a change in the majority carriers (holes) concentration and their Hall mobility. A possible mechanism is proposed of changing of the strength properties of germanium and silicon at a change of the number of current carriers.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Electrical transport and photoresponse properties of single-crystalline p-type Cd3As2 nanowires
    Duan TingYuan
    Lou Zheng
    Shen GuoZhen
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2015, 58 (02) : 1 - 6
  • [32] Electrical transport and photoresponse properties of single-crystalline p-type Cd3As2 nanowires
    TingYuan Duan
    Zheng Lou
    GuoZhen Shen
    Science China Physics, Mechanics & Astronomy, 2015, 58 : 1 - 6
  • [33] Single-charge tunnelling in n- and p-type strained silicon germanium on silicon-on-insulator
    Kanjanachuchai, S
    Bonar, JM
    Ahmed, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (12) : 1065 - 1068
  • [34] 57Fe Mössbauer investigations in p-type Silicon Germanium single crystals
    D. Naidoo
    H. P. Gunnlaugsson
    K. Bharuth-Ram
    V. V. Naicker
    G. Weyer
    R. Sielemann
    R. Mantovan
    M. Fanciulli
    Hyperfine Interactions, 2009, 188 : 11 - 17
  • [35] Application of commercialised single-crystalline silicon solar cells on thin plastic concentrator
    Chen, H. C.
    Chang, L. B.
    ELECTRONICS LETTERS, 2010, 46 (02) : 162 - 163
  • [36] Amorphous silicon p-type crystalline silicon heterojunction solar cells
    Jagannathan, B
    Anderson, WA
    Coleman, J
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 46 (04) : 289 - 310
  • [37] Piezoresistance effect in p-type silicon
    Kanda, Y
    Matsuda, K
    Physics of Semiconductors, Pts A and B, 2005, 772 : 79 - 80
  • [38] On the bending characterization of flexible radio-frequency single-crystalline germanium diodes on a plastic substrate
    Qin, Guoxuan
    Zuo, Kelei
    Seo, Jung-Hun
    Xu, Yanmeng
    Yuan, Hao-Chih
    Liu, Hao
    Huang, Zhiyuan
    Ma, Jianguo
    Ma, Zhenqiang
    APPLIED PHYSICS LETTERS, 2015, 106 (04)
  • [39] PLASTIC-DEFORMATION EFFECT ON ELECTRIC PROPERTIES OF P-TYPE INSB SINGLE-CRYSTALS AT HIGH DEFORMING RATES
    KRASNOV, AP
    OSIPYAN, YA
    FIZIKA TVERDOGO TELA, 1980, 22 (02): : 483 - 489
  • [40] EVEN HALL-EFFECT IN P-TYPE GERMANIUM
    VASHKYAV.R
    DENENE, M
    REPSHAS, K
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 983 - &
12345