Effect of combined plastic deformation on microhardness of single-crystalline p-type germanium and silicon

被引：1
|
作者：
Velikhanov, A. R. [1 ]
机构：
[1] Russian Acad Sci, Daghestan Fed Res Ctr, H Amirkhanov Inst Phys, M Yaragsky St 94, Makhachkala 367015, Russia
来源：
PHYSICA B-CONDENSED MATTER | 2021年 / 621卷
关键词：
Plastic deformation; Germanium; Silicon; Temperature; Electric current; Microhardness; COMPRESSION CURVES; ELECTRIC-CURRENT; PARAMETERS;
D O I：
10.1016/j.physb.2021.413205
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study of conductivity and microhardness was performed on plastically deformed samples of germanium and silicon. The dependences of the microhardness on the degree of plastic deformation of germanium and silicon have noticeable differences. The microhardness of germanium and silicon varies significantly with a change in the majority carriers (holes) concentration and their Hall mobility. A possible mechanism is proposed of changing of the strength properties of germanium and silicon at a change of the number of current carriers.
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页数：4
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