Self-consistent calculation of current self-distribution effect in GaAs-AlGaAs oxide-confined VCSELs

被引：19
|
作者：
Osinski, M [1 ]
Smagley, VA
Lu, M
Smolyakov, GA
Eliseev, PG
Riely, BP
Shen, PH
Simonis, GJ
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow, Russia
[3] USA, Res Lab, Adelphi, MD 20783 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2003年 / 9卷 / 05期
关键词：
semiconductor device modeling; semiconductor lasers; vertical cavity surface-emitting laser (VCSEL);
D O I：
10.1109/JSTQE.2003.819507
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three-dimensional electrical-thermal-optical numerical solver is applied to model GaAs-AlGaAs-based top-emitting oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with GaAs multiple-quantum-well active region. Continuous-wave mode of operation is simulated over a range of voltages, covering the subthreshold spontaneous emission and lasing emission. The effect of self-distribution of electrical current is demonstrated for the first time in self-consistent electrical-thermal-optical simulation of VCSELs.
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页码：1422 / 1430
页数：9
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