Dielectric properties of (Ba0.60, Sr0.40)TiO3 thin films on NdGaO3 substrates at 10 GHz

被引:0
|
作者
Simon, WK [1 ]
Akdogan, EK [1 ]
Bellotti, J [1 ]
Safari, A [1 ]
机构
[1] Rutgers State Univ, Dept Ceram & Mat Engn, Piscataway, NJ 08854 USA
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This work investigates the effects of anisotropic epitaxial strains on the microwave frequency dielectric response of BST (60/40) thin films. Dielectric properties such as permittivity and tunability along the <-110 >, <-111 > and < 001 > crystallographic directions correlate well with the variation of elastic strain energy as a function of film thickness. We demonstrate unequivocally that the maximum permittivity and tunability is obtained along a crystallographic direction where the strain is a minimum.
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页码:47 / 50
页数:4
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