Low Voltage Operating InGaZnO4 Thin Film Transistors with Sputter-Deposited PMMA/High-k BST Stacked Gate Dielectric Layers

被引：4
|
作者：
Kim, Dong Hun [1 ]
Cho, Nam Gyu [2 ]
Kim, Ho-Gi [2 ]
Kim, Il-Doo [3 ]
机构：
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Korea Adv Inst Sci & Technol, Optoelect Mat Ctr, Seoul 130650, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 11期
关键词：
ORGANIC TRANSISTORS; INSULATORS;
D O I：
10.1149/1.3479689
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This study reports the enhanced electrical properties of InGaZnO4 thin film transistors (TFTs) with sputter-deposited poly(methyl methacrylate) (PMMA)/Ba0.6Sr0.4TiO3 (BST) stacked gate dielectrics. A noticeable reduction in the leakage current density (similar to 10(-8) A/cm(2) at 0.3 MV) was achieved by coating a PMMA overlayer. The InGaZnO4 TFTs utilizing the PMMA (30 nm)/BST (270 nm) stacked gate dielectrics exhibited a high on/off current ratio of 2.6 X 10(6), a high field effect mobility of 10.2 cm(2)/V center dot s, and a low threshold voltage of 1.1 V. Using stacked gate dielectric layers, we realized the low voltage operating InGaZnO4 TFTs on a poly(ethylene terephthalate) substrate. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3479689] All rights reserved.
引用
收藏
页码：H370 / H372
页数：3
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