Quantum size effects in low-temperature growth of Pb islands on Si(111)7 x 7 surfaces

被引：6

作者：

Su, WB ^{[1
]}

Chang, SH

Chang, CS

Chen, LJ

Tsong, TT

机构：

[1] Acad Sinica, Inst Phys, Taipei, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 6B期

关键词：

quantum size effect; electronic growth; critical thickness; magic thickness; quantized states; asymmetrical relaxation;

D O I：

10.1143/JJAP.40.4299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Flat-top Pb islands with critical and magic thickness have been observed in the Pb/Si(111)7 x 7 system at 200K by scanning tunneling microscopy. The growth behavior, different from that in the Stranski-Krastanov mode, arises from a quantum size effect. Quantized states are detected in the current-voltage (I-V) spectra on the Pb islands of varying thickness. Our observation of asymmetrical and oscillatory relaxation in the island thickness reveals that the charge distribution of confined electrons can influence the interlayer spacing. A simple model based on the infinite potential well can explain well all of our results.

引用

页码：4299 / 4303

页数：5

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