Band structure and optical gain of 1.3 um GaAsSbN/GaAs compressively strained quantum well

被引：0

作者：

Dong, B. ^{[1
]}

Fan, W. J. ^{[1
]}

Dang, Y. X. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore

来源：

SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES | 2008年 / 31卷

关键词：

band Structure; optical gain; quantum well(QW); compressively strained;

D O I：

10.4028/www.scientific.net/AMR.31.95

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 mu m lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

引用

页码：95 / +

页数：2

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