Fabrication and electric properties of LaCoO3 thin films by ion-beam sputtering

被引:10
|
作者
Hattori, T [1 ]
Matsui, T [1 ]
Tsuda, H [1 ]
Mabuchi, H [1 ]
Morii, K [1 ]
机构
[1] Univ Osaka Prefecture, Grad Sch Engn, Dept Met & Mat Sci, Sakai, Osaka 5998531, Japan
基金
日本学术振兴会;
关键词
annealing; electrical properties and measurements; oxides; sputtering;
D O I
10.1016/S0040-6090(01)00822-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have successfully produced LaCoO3 thin films by ion-beam sputtering and subsequent heat treatment. The compacts of La2O3 and CoO powder mixture were used for the targets. The films were mainly composed of the LaCoO3 phase, with a very small amount of an unidentified second phase. The resistivity at room temperature for the annealed 50 at.% La sample was determined to be 51 Omega m, whereas at high temperature, the resistivity was found to be same order of that for bulk LaCoO3, that is, comparable to the resistivity for metals. The possibility of a metal-insulator transition is described. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:183 / 188
页数:6
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