Epitaxial Growth of ZnO Films on ZnO-Buffered Al2O3 (0001) in Water at 95°C

被引：8

作者：

Park, Jae Young ^{[1
]}

Choi, Sun-Woo ^{[1
]}

Kim, Sang Sub ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2011年 / 94卷 / 04期

关键词：

LIGHT-EMITTING DIODE; PHOTOLUMINESCENCE PROPERTIES; AQUEOUS-SOLUTION; THIN-FILM;

D O I：

10.1111/j.1551-2916.2011.04406.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A very low-temperature (95 degrees C) aqueous solution route has applied to growing epitaxial ZnO films on Al2O3 (0001). A 500-nm-thick ZnO film was beforehand deposited on Al2O3 (0001) by sputtering as a buffer layer to enhance the homoepitaxial growth of ZnO in the aqueous solution. At an early stage of growth, hexagon-shaped ZnO microcrystals grow. At later stages of growth, the hexagon microcrystals coalesce, finally producing continuous epitaxial films of ZnO, which has been confirmed by high-resolution X-ray diffraction studies.

引用

页码：978 / 981

页数：4

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