High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance

被引：0
|
作者：
Shang, Chen [1 ]
Hughes, Eamonn [1 ]
Wan, Yating [2 ]
Dumont, Mario [2 ]
Koscica, Rosalyn [1 ]
Selvidge, Jennifer [1 ]
Herrick, Robert [3 ]
Gossard, Arthur C. [1 ]
Mukherjee, Kunal [4 ]
Bowers, John E. [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Intel Corp, Santa Clara, CA 95054 USA
[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
来源：
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2021年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a novel solution to the high temperature reliability of InAs quantum dot lasers grown on (001) Si. Negligible degradation was observed after 1800 h aging, giving an extrapolated lifetime of two million hours.
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