Epitaxial growth of ferroelectric YMnO3 thin films on Si (111) substrates by molecular beam epitaxy

被引：45

作者：

Imada, S ^{[1
]}

Shouriki, S ^{[1
]}

Tokumitsu, E ^{[1
]}

Ishiwara, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 12A期

关键词：

ferroelectric; Y2O3; YMnO3; molecular beam epitaxy; epitaxial growth; Si;

D O I：

10.1143/JJAP.37.6497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best full-width at half maximum (FWHM) values for Y2O3 and YMnO3 films are 0.4 degrees and 1.5 degrees, respectively. Concerning the electrical properties, capacitance-voltage (C-V) characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.3 V.

引用

页码：6497 / 6501

页数：5

共 50 条

[31] Fabrication of YMnO3 thin films on Si substrates by a pulsed laser deposition method
Yoshimura, T
Fujimura, N
Aoki, N
Hokayama, K
Tsukui, S
Kawabata, K
Ito, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B): : 5921 - 5924
[32] PREFERENTIAL ORIENTATION GROWTH OF AlN THIN FILMS ON Si(111) SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY
Chuah, L. S.
Hassan, Z.
Abu Hassan, H.
SURFACE REVIEW AND LETTERS, 2009, 16 (06) : 925 - 928
[33] Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy
Kawaguchi, Takahiko
Uemura, Hiroki
Ohno, Toshiya
Watanabe, Ryotaro
Tabuchi, Masao
Ujihara, Toru
Takenaka, Koshi
Takeda, Yoshikazu
Ikuta, Hiroshi
APPLIED PHYSICS EXPRESS, 2009, 2 (09)
[34] Effects of post-annealing on the microstructure and ferroelectric properties of YMnO3 thin films on Si
Yoo, DC
Lee, JY
Kim, IS
Kim, YT
JOURNAL OF CRYSTAL GROWTH, 2001, 233 (1-2) : 243 - 247
[35] Epitaxial growth of ferromagnetic Fe3Si films on CaF2/Si(111) by molecular beam epitaxy
Sunohara, T
Kobayashi, K
Umada, M
Yanagihara, H
Kita, E
Akinaga, H
Suemasu, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (20-23): : L715 - L717
[36] Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer layer
Fujita, M
Sasajima, M
Deesirapipat, Y
Horikoshi, Y
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 293 - 298
[37] Two-layer crystallization of amorphous YMnO3 thin films on Si(100) substrates
Yoo, DC
Lee, JY
Kim, IS
Kim, YT
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2003, 86 (01) : 149 - 151
[38] Ferroelectric Properties of Magnetoferroelectric YMnO3 Epitaxial Films at around the Neel Temperature
Yoshimura, Takeshi
Maeda, Kazuhiro
Ashida, Atsushi
Fujimura, Norifumi
ELECTROCERAMICS IN JAPAN XIII, 2010, 445 : 144 - 147
[39] Epitaxial Growth of Si(111)/Er2O3 (111) Structure on Si(111) by Molecular Beam Epitaxy
Xu Run
Tang Min-Yan
Zhu Yan-Yan
Wang Lin-Jun
CHINESE PHYSICS LETTERS, 2011, 28 (03)
[40] Origin of the photoinduced current of strongly correlated YMnO3 ferroelectric epitaxial films
Miura, Kohei
Zhang, Lejun
Kiriya, Daisuke
Ashida, Atsushi
Yoshimura, Takeshi
Fujimura, Norifumi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (10)

← 1 2 3 4 5 →