Epitaxial growth of ferroelectric YMnO3 thin films on Si (111) substrates by molecular beam epitaxy

被引：45
|
作者：
Imada, S [1 ]
Shouriki, S [1 ]
Tokumitsu, E [1 ]
Ishiwara, H [1 ]
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 12A期
关键词：
ferroelectric; Y2O3; YMnO3; molecular beam epitaxy; epitaxial growth; Si;
D O I：
10.1143/JJAP.37.6497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best full-width at half maximum (FWHM) values for Y2O3 and YMnO3 films are 0.4 degrees and 1.5 degrees, respectively. Concerning the electrical properties, capacitance-voltage (C-V) characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.3 V.
引用
收藏
页码：6497 / 6501
页数：5
相关论文
共 50 条
  • [1] Epitaxial growth of ferroelectric YMnO3 thin films on Si(111) substrates by molecular beam epitaxy
    Imada, Shogo
    Shouriki, Shigeto
    Tokumitsu, Eisuke
    Ishiwara, Hiroshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (12 A): : 6497 - 6501
  • [2] Crystallization behavior of ferroelectric YMnO3 thin films on Si(100) substrates
    Yoo, DC
    Lee, JY
    Kim, IS
    Kim, YT
    JOURNAL OF CRYSTAL GROWTH, 2002, 234 (2-3) : 454 - 458
  • [3] Crystallization behavior and ferroelectric properties of YMnO3 thin films on Si (100) substrates
    Yoo, DC
    Lee, JY
    Kim, IS
    Kim, YT
    FERROELECTRIC THIN FILMS X, 2002, 688 : 73 - 77
  • [4] Epitaxial growth of ferromagnetic Fe3N films on Si(111) substrates by molecular beam epitaxy
    Yamaguchi, K.
    Yui, T.
    Yamaki, K.
    Kakeya, I.
    Kadowaki, K.
    Suemasu, T.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 597 - 601
  • [5] Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates
    Parashar, S
    Raju, AR
    Rao, CNR
    Victor, P
    Krupanidhi, SB
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (17) : 2134 - 2140
  • [6] Epitaxial integration of improper ferroelectric hexagonal YMnO3 thin films in heterostructures
    Nordlander, J.
    Rossell, M. D.
    Campanini, M.
    Fiebig, M.
    Trassin, M.
    PHYSICAL REVIEW MATERIALS, 2020, 4 (12):
  • [7] Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy
    Binetti, Alberto
    Hsu, Wei-Fan
    Schouteden, Koen
    Seo, Jin Won
    Locquet, Jean-Pierre
    Payo, Maria Recaman
    RESULTS IN PHYSICS, 2023, 49
  • [8] Epitaxial growth of semiconducting BaSi2 films on Si(111) substrates by molecular beam epitaxy
    Inomata, Yuya
    Nakamura, Tomoyuki
    Suemasu, Takashi
    Hasegawa, Fumio
    Japanese Journal of Applied Physics, Part 2: Letters, 2004, 43 (4 A):
  • [9] Microstructure control of YMnO3 thin films on Si (100) substrates
    Yoo, DC
    Lee, JY
    Kim, IS
    Kim, YT
    THIN SOLID FILMS, 2002, 416 (1-2) : 62 - 65
  • [10] MBE growth of ferroelectric YMnO3 thin films on Si(111) using Y2O3 buffer layers
    Imada, Shogo
    Shouriki, Shigeto
    Tokumitsu, Eisuke
    Ishiwara, Hiroshi
    Materials Research Society Symposium - Proceedings, 1999, 541 : 585 - 590
12345