Integration of thin film transistor controlled carbon nanotubes for field emission devices

被引：14
|
作者：
Cheng, HC [1 ]
Hong, WK
Tarntair, FG
Chen, KJ
Lin, JB
Chen, KH
Chen, LC
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30050, Taiwan
[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
[4] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2001年 / 4卷 / 04期
关键词：
D O I：
10.1149/1.1354497
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A new field emission device composed of carbon nanotubes and a thin film transistor (TFT) has been successfully demonstrated to significantly improve emission stability. Carbon nanotubes are directly integrated in the drain region of the TFT and the emission current from the carbon nanotubes is controlled via the TFT drain current. The fluctuation of the emission current of the TFT-controlled carbon nanotubes can be suppressed to less than 2%, below the fluctuation of uncontrolled carbon nanotubes. The novel field emission device exhibits low-voltage controllability, good emission stability, and structural simplicity, making it promising for application to future field-emission display. (C) 2001 The Electrochemical Society.
引用
收藏
页码：H5 / H7
页数：3
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