A high oxide:nitride selectivity CMP slurry for shallow trench isolation

被引：0
|
作者：
Laparra, O [1 ]
Weling, M [1 ]
Hosali, S [1 ]
Lavoie, R [1 ]
机构：
[1] VLSI Technol Inc, San Jose, CA 95131 USA
来源：
CHEMICAL MECHANICAL PLANARIZATION IN INTEGRATED CIRCUIT DEVICE MANUFACTURING | 1998年 / 98卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A High SiO:SiN selectivity slurry developed for STI CMP Application has been evaluated. Results show that the new slurry provides substantial improvements over current available consumables, thereby significantly widening and improving process margin, as well as post CMP film thickness consistency and uniformity. Improvements in physical film characteristics have a direct correlation with electrical characteristics in terms of isolation properties, device performances and process yield.
引用
收藏
页码：218 / 234
页数：17
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