Structural, optical, and photoluminescence study of ZnO/IGZO thin film for thin film transistor application

被引：26
|
作者：
Tiwari, Nidhi [1 ]
Shieh, Han-Ping D.
Liu, Po-Tsun
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
来源：
MATERIALS LETTERS | 2015年 / 151卷
关键词：
Sputtering; Semiconductor; Thin films;
D O I：
10.1016/j.matlet.2015.03.043
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly transparent and c-axis oriented zinc oxide (ZnO)/indium gallium zinc oxide (IGZO) thin films have been fabricated by R.F. sputtering. The effect of annealing on physical properties of the films was investigated and compared with a-IGZO thin films. The films are wurtzite-type hexagonal structure similar to ZnO with [0 0 0 2] preferred direction and exhibit less density of defects. The TFTs fabricated with ZnO/IGZO films after annealing at 450 degrees C reveal smaller sub-threshold swing (SS similar to 0.52 V/dec) and threshold voltage (Vth similar to 1.3 V) than the TFTs (SS similar to 0.82 V/dec, Vth similar to 13.3 V) of a-IGZO thin film annealed at the same temperature. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：53 / 56
页数：4
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