Analytical Method for Ultra-Low Power UWB Low-Noise Amplifiers

被引：0
|
作者：
Saied, Ahmed M. [1 ]
Abutaleb, M. M. [1 ]
Eladawy, Mohamed I. [1 ]
Ragai, Hani [2 ]
机构：
[1] Helwan Univ, Elect & Commun Engn Dept, Cairo, Egypt
[2] Ain Shams Univ, Elect & Commun Engn Dept, Cairo, Egypt
来源：
15TH INTERNATIONAL CONFERENCE ON SYNTHESIS, MODELING, ANALYSIS AND SIMULATION METHODS AND APPLICATIONS TO CIRCUIT DESIGN (SMACD 2018) | 2018年
关键词：
low-noise amplifier (LNA); ultra-wideband (UWB); ultra-low power (ULP); figure of merit (FoM); CMOS; INPUT; LNA;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper presents a MOSFET model for ultra-low power radio-frequency integrated circuits (RFICs) design. In addition, we discussed the concept of the Operating Parameter (OP) as the main design parameter used to determine the operating point, from weak, via moderate, or strong inversion. The proposed OP based analytical model is applied to an LNA design (3-5 GHz) in 130 nm CMOS technology. Simulation results showed a minimum noise figure (NF) of 2.3 dB, max gain 9.6 dB and 0.25 mW power dissipation. The figure of merit (FoM) is found to be superior to previous design techniques.
引用
收藏
页码：189 / 192
页数：4
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